【韶风名家论坛】Particle and Photon detector research at RuđerBošković Institute (RBI)(RBI的粒子光子探测器研究进展)

题 目Particle and Photon detector research at RuđerBošković Institute (RBI)(RBI的粒子光子探测器研究进展)
报告人Jaakko Härkönen 教授
    ERA Chair at Ruđer Bošković Institute
主持人李正 教授
时 间2018年12月7日下午2:30
地 点第二教学楼319室
 
报告人简介:
  Jaakko教授是世界知名的半导体探测器专家,2001年于Aalto university获得博士学位,2001至2012年在Helsinki Institute of Physics研究以直拉单晶硅为基体材料的强子辐射探测器的制作。同时是Co-spokesperson of CERN RD39 Collaboration以及Convener for CERN RD50 Collaboration。2008年作为芬兰硬件组的领导人,负责CERN LHC加速器的CMS实验。2016年作为ERA (European Research Area) 主席,ERA(欧洲研究区)项目的目标是在Ruđer Bošković Institute(RBI)建立一个专注于半导体辐射探测器的小组和设施。Jaakko教授至今已发表论文500论文,其中约100篇发表在同行评审的期刊。其研究内容主要涉及半导体加工、辐射探测器、高能物理仪器和硅探测器的抗辐射加固。
 
报告内容简介
  英文:A design, fabrication process and characterization of photon detectors will be presented made of bulk Cadmium Telluride (CdTe) crystals, silicon drift detectors (SDD) and silicon detectors attached with conversion layer scintillator materials (SiS). The Si wafer and chip-scale CdTe detector processing with related interconnection processing was carried out in clean room premises of Micronova center in Espoo, Finland. Unlike Si wafers, CdTe processing must be carried out at the temperatures lower than 150C. Thus, we have developed a low temperature passivation layer processes of aluminum oxide (Al2O3) grown by Atomic Layer Deposition (ALD) method. The CdTe crystals the size of 10 × 10 × 0.5mm3 were patterned with proximity-contactless photo-lithography techniques. The detector properties were characterized by IV-CV, Transient Current Technique (TCT) and scanning micrometer precision proton beam methods. The experimental results were verified with TCAD simulations with appropriate defect and material parameters.
 
  中文:讲座介绍了一种由碲化镉晶体、硅漂移探测器和带有转换层闪烁体材料的硅探测器组成的光子探测器的设计、制备和表征方法。Si晶片和芯片级CdTe探测器的处理以及相关的互连处理在Espoo的Micronova center洁净室进行。不同于硅芯片,CdTe处理必须在温度低于150C。因此,我们开发了一种用原子层沉积法生长氧化铝(Al2O3)的低温钝化层工艺。大小为10×10×0.5 mm3的CdTe单晶通过邻近非接触式光刻技术来制作。采用IV-CV、瞬变电流技术(TCT)和扫描微米精度质子束的方法对探测器性能进行了表征。通过调节缺陷和材料参数将其带入TCAD仿真中,验证了实验的结果。
 
 
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